absolute maximum ratings parameter units i d @ v gs = 12v, t c = 25c continuous drain current 35* i d @ v gs = 12v, t c = 100c continuous drain current 32 i dm pulsed drain current ? 140 p d @ t c = 25c max. power dissipation 250 w linear derating factor 2.0 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy ? 500 mj i ar avalanche current ? 35 a e ar repetitive avalanche energy ? 25 mj dv/dt p eak diode recovery dv/dt ? 10 v/ns t j operating junction -55 to 150 t stg storage temperature range lead temperature 300 (0.063 in. /1.6 mm from case for 10s) weight 9.3 (typical) g international rectifier?s r5 tm technology provides high performance power mosfets for space appli- cations. these devices have been characterized for single event effects (see) with useful performance up to an let of 80 (mev/(mg/cm 2 )). the combination of low r ds(on) and low gate charge reduces the power losses in switching applications such as dc to dc converters and motor control. these devices retain all of the well established advantages of mosfets such as voltage control, fast switching, ease of paral- leling and temperature stability of electrical param- eters. o c a 01/30/03 www.irf.com 1 200v, n-channel * current is limited by internal wire diameter technology product summary part number radiation level r ds(on) i d irhm57260 100k rads (si) 0.049 ? 35a* irhm53260 300k rads (si) 0.049 ? 35a* irhm54260 600k rads (si) 0.049 ? 35a* IRHM58260 1000k rads (si) 0.050 ? 35a* features: single event effect (see) hardened neutron tolerant identical pre- and post-electrical test conditions repetitive avalanche ratings dynamic dv/dt ratings simple drive requirements ease of paralleling hermatically sealed electically isolated ceramic eyelets for footnotes refer to the last page to-254aa pre-irradiation light weight radiation hardened irhm57260 power mosfet thru-hole (to-254aa) pd - 91862d
irhm57260 pre -irradiation 2 www.irf.com source-drain diode ratings and characteristics parameter min typ max units t est conditions i s continuous source current (body diode) ? ? 35* i sm pulse source current (body diode) ? ? ? 140 v sd diode forward voltage ? ? 1.2 v t j = 25c, i s = 35a, v gs = 0v ? t rr reverse recovery time ? ? 450 ns t j = 25c, i f = 35a, di/dt 100a/ s q rr reverse recovery charge ? ? 6.0 cv dd 25v ? t on forward tu rn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a note: corresponding spice and saber models are available on the g&s website. for footnotes refer to the last page * current is limited by internal wire diameter thermal resistance parameter min typ max units t est conditions r thjc junction-to-case ? ? 0.50 r thcs case-to-sink ? 0.21 ? c/w r thja junction-to-ambient ? ? 48 typical socket mount electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units t est conditions bv dss drain-to-source breakdown voltage 200 ? ? v v gs = 0v, i d = 1.0ma ? bv dss / ? t j temperature coefficient of breakdown ? 0.26 ? v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source on-state ? ? 0.049 ? v gs = 12v, i d = 32a resistance v gs(th) gate threshold voltage 2.0 ? 4.0 v v ds = v gs , i d = 1.0ma g fs forward transconductance 40 ? ? s ( )v ds > 15v, i ds = 32a ? i dss zero gate voltage drain current ? ? 10 v ds = 160v ,v gs =0v ??25 v ds = 160v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward ? ? 100 v gs = 20v i gss gate-to-source leakage reverse ? ? -100 v gs = -20v q g total gate charge ? ? 155 v gs =12v, i d = 35a q gs gate-to-source charge ? ? 45 nc v ds = 100v q gd gate-to-drain (?miller?) charge ? ? 75 t d (on) turn-on delay time ? ? 35 v dd = 100v, i d = 35a t r rise time ? ? 125 v gs =12v, r g = 2.35 ? t d (off) turn-off delay time ? ? 80 t f fall time ? ? 50 l s + l d total inductance ? 6.8 ? measured from drain lead (6mm /0.25in. from package) to source lead (6mm /0.25in. from package) with source wires internally bonded from source pin to drain pad c iss input capacitance ? 7580 ? v gs = 0v, v ds = 25v c oss output capacitance ? 920 ? p f f = 1.0mhz c rss reverse transfer capacitance ? 60 ? na ? ? nh ns a
www.irf.com 3 irhm57260 table 1. electrical characteristics @ tj = 25c, post total dose irradiation parameter up to 600k rads(si) 1 1000k rads (si) 2 units test conditions min max min max bv dss drain-to-source breakdown voltage 200 ? 200 ? v v gs = 0v, i d = 1.0ma v gs(th) gate threshold voltage 2.0 4.0 1.25 4.0 v gs = v ds , i d = 1.0ma i gss gate-to-source leakage forward ? 100 ? 100 na v gs = 20v i gss gate-to-source leakage reverse ? -100 ? -100 v gs = -20 v i dss zero gate voltage drain current ? 10 ? 25 a v ds = 160v, v gs =0v r ds(on) static drain-to-source ? 0.044 ? 0.045 v gs = 12v, i d =32a on-state resistance (to-3) r ds(on) static drain-to-source ? 0.049 ? 0.050 v gs = 12v, i d =32a on-state resistance (to-254) international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the t o-3 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. radiation characteristics 1. part numbers irhm57260, irhm53260 and irhm54260 2. part number IRHM58260 fig a. single event effect, safe operating area v sd diode forward voltage ? 1.2 ? 1.2 v v gs = 0v, i s = 35a international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. for footnotes refer to the last page table 2. single event effect safe operating area ion let energy range v ds (v) mev/(mg/cm 2 ) (mev) (m) @v gs =0v @v gs =-5v @v gs =-10v @v gs =-15v @v gs =-20v br 36.7 309 39.5 200 200 150 100 50 i 59.8 341 32.5 200 100 40 35 30 au 82.3 350 28.4 50 35 25 ? ? 0 50 100 150 200 250 0 -5 -10 -15 -20 vgs vds br i au
irhm57260 pre -irradiation 4 www.irf.com fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 1 10 100 1000 0.1 1 10 100 20 s pulse width t = 25 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source volta g e (v) i , drain-to-source current (a) ds d 5.0v 1 10 100 1000 0.1 1 10 100 20 s pulse width t = 150 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source volta g e (v) i , drain-to-source current (a) ds d 5.0v 10 100 1000 5.0 5.5 6.0 6.5 7.0 v = 50v 20 s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = = gs d 12v 35a
www.irf.com 5 pre-irradia tion irhm57260 fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 0 2000 4000 6000 8000 10000 12000 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss g s g d , ds rss g d oss ds g d c rss c oss c iss 0 40 80 120 160 200 240 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure = d 13 35a v = 40v ds v = 100v ds v = 160v ds 0.1 1 10 100 1000 0.2 0.6 1.0 1.4 1.8 2.2 v ,source-to-drain volta g e (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 1 10 100 1000 v ds, drain-to-source voltage (v) 0.1 1 10 100 1000 d , dra n current (a) 10us 100us 1ms 10ms tc = 25c tj = 150c single pulse operation in this area limited by r ds(on)
irhm57260 pre -irradiation 6 www.irf.com fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. + - v dd fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 25 50 75 100 125 150 0 10 20 30 40 50 t , case temperature ( c) i , drain current (a) c d limited by package 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) v gs
www.irf.com 7 pre-irradia tion irhm57260 q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 0 ? 1 ... 1 1. 1. 1. . 1. 1. 0.01 ? .. 1 . 25 50 75 100 125 150 0 200 400 600 800 1000 1200 startin g t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 16a 22a 35a v gs
irhm57260 pre -irradiation 8 www.irf.com ? 00 % ? ? ? ? ? 10 00 10 100 . . . 0 10 10 10 0 .. . . 010 not e s : 1. dime ns ioning & t ole rancing pe r as me y14.5m-1994. 2. all dimensions are shown in millimeters [inches]. 1 = drain 2 = s ource 3 = gat e pin as s ignme nt s 3. cont rol l ing dime ns ion: inch . 4. conforms to jedec outline to-254aa. 6 60 [ 260] 6 32 [ 249] 1 27 [ 050] 1 02 [ 040] 0 12 [ 005] 13 84 [ 545] 13 59 [ 535] 13 84 [ 545] 13 59 [ 535] 3 81 [ 150] 2x 17 40 [ 685] 16 89 [ 665] a 1 14 [ 045] 0 89 [ 035] 0 36 [ 014] b a 3x b 20 32 [ 800] 20 07 [ 790] 3 78 [ 149] 3 53 [ 139] 123 17 40 [ 685] 16 89 [ 665] 3 81 [ 150 ] 0 84 [ 033] max c 6 60 [ 260] 6 32 [ 249] 1 27 [ 050] 1 02 [ 040] 0 12 [ 005] 13 84 [ 545] 13 59 [ 535] 13 84 [ 545] 13 59 [ 535] 3 81 [ 150] 2x 22 73 [ 895] 21 21 [ 835] 17 40 [ 685] 16 89 [ 665] a 1 14 [ 045] 0 89 [ 035] 0 36 [ 014] b a 3x 4 06 [ 160] 3 56 [ 140] b r 1 52 [ 06 0] 123 4 82 [ 190] 3 81 [ 150] 20 32 [ 800] 20 07 [ 790] 3 78 [ 149] 3 53 [ 139]
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